A 1-μW 600-ppm/◦C Current Reference Circuit Consisting of Subthreshold CMOS Circuits
نویسندگان
چکیده
A low-power CMOS current reference circuit was developed using a 0.35-μm standard CMOS process technology. The circuit consists of MOSFET circuits operating in the subthreshold region and uses no resistors. It compensates for the temperature effect on mobility μ and threshold voltage VTH of MOSFETs and generates a reference current that is insensitive to temperature and supply voltage. Theoretical analyses and experimental results showed that the circuit generates a stable reference current of 100 nA. The temperature coefficient of the current was 520 ppm/◦C at best and 600 ppm/◦C on average in the range of 0 ◦C–80 ◦C. The line regulation was 0.2%/V in a supply voltage range of 1.8–3 V. The power dissipation was 1 μW, and the chip area was 0.015 mm. Our circuit would be suitable for use in subthreshold-operated power-aware large-scale integrations.
منابع مشابه
A 95-nA, 523ppm/°C, 0.6-μW CMOS current reference circuit with subthreshold MOS resistor ladder
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